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来源：百度知道 编辑：UC知道 时间：2024/04/20 02:13:03
Abstract
The control ofphosphorus-implanted polysilicon layers proves difficult in the 10–20 kO=sq resistivity range required
for biasing microstrip detectors. The sheet resistivity is mainly governed by the density of the trap states linked to grain
boundaries. During plasma-assisted layer deposition, free hydrogen ions are generated, which fill up these traps, thereby
significantly affecting the final resistance. This trap-filling factor depends on the backend fabrication process. Large
variations ofthe sheet resistivity can easily be explained by a lower trap-filling level, due to the presence of a nitride
capping. In this work, the effects ofthe direct H implantation are presented. It will be shown that the on-wafer
dispersion is thereby decreased to about 5%. The metal-line screening effect is also discussed. # 2001 Elsevier Science
B.V. All rights reserved
The control ofphosphorus-implanted polysilicon layers proves difficult in the 10–20 kO=sq resistivity range required
for biasing microstrip detectors. The sheet resistivity is mainly governed by the density of the trap states linked to grain
boundaries. During plasma-assisted layer deposition, free hydrogen ions are generated, which fill up these traps, thereby
significantly affecting the final resistance. This trap-filling factor depends on the backend fabrication process. Large
variations ofthe sheet resistivity can easily be explained by a lower trap-filling level, due to the presence of a nitride
capping. In this work, the effects ofthe direct H implantation are presented. It will be shown that the on-wafer
dispersion is thereby decreased to about 5%. The metal-line screening effect is also discussed. # 2001 Elsevier Science
B.V. All rights reserved
摘要
控制ofphosphorus种植的polysilicon层在这10个-平方的resistivity范围需要的20 kO =证明是难
为以偏见影响microstrip 检测器。 褥单resistivity 主要取决於对谷类连结的俘获状态的密度
边界。 在等离子帮助的层免职期间，自由氢离子被产生，这装满这些陷阱，因此
相当影响最后的抵抗。 这个充满陷阱的原素取决於后端捏造过程。 大
由於氮化物的存在，更低的充满陷阱的水准能容易解释变化ofthe 图表resistivity
覆盖。 在这工作里，影响ofthe 直接的H 种植被提出。 在维夫饼乾上将被显示那
散布被因此减少到大约5%。 筛选影响的这条金属线也被讨论。 2001 Elsevier 科学
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