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来源：百度知道 编辑：UC知道 时间：2024/05/29 12:46:08
摘要：采用单量子阱近似模型，对GaN/AlxGa1-xN量子阱中的激子进行了理论分析和数值计算。结果表明随着垒中Al含量的增加，基态激子的能量都迅速减小，发光波长增大；随着量子阱宽度的增加，基态激子能量减小，发光波长增大，但影响比较小，起微调作用。
关键词：GaN/AlxGa1-xN；量子阱；基态激子能量；发光波长
关键词：GaN/AlxGa1-xN；量子阱；基态激子能量；发光波长
Single quantum well approximate model of the quantum well GaN/AlxGa1-xN exciton in the theoretical analysis and numerical calculations. The results showed that with the base in Al content increases, the ground state exciton energy are rapidly decreasing, luminescence wavelength increases the width of the quantum well as the increase in ground-state exciton energy decreases, LED wavelength increases, the influence Relatively small, since fine-tuning role.