UC知道光电子的专业英语高手们请来看看，帮个忙翻译个东西
来源：百度知道 编辑：UC知道 时间：2024/05/28 14:14:04
下面这段话请帮忙翻译下，在下先言谢！
To facilitate interpretation of the data we removed the influence of reflections
numerically,using the dielectric function obtianed from the Drude fit.The
correction,of which the result is shown in Fig.3(a),is especially important for
the very high frequencies,where the absorption is low and the interference
frings are strong,and for the very low frequencies,where the index of refraction
becomes large.The absorption is seen to be quite strong,more than 2000 times
greater than that of the host crystal.Below 0.15 THz the data become noisy
due to the limited beam power,but the theoretically predicted drop in
absorption at low frequencies is clearly observable.In Fig.3(b),we present the
obtained real part of the index of refraction versus frequency.This quantity is
strongly frequency dependent,showing a clear minimum followed by a
dram
To facilitate interpretation of the data we removed the influence of reflections
numerically,using the dielectric function obtianed from the Drude fit.The
correction,of which the result is shown in Fig.3(a),is especially important for
the very high frequencies,where the absorption is low and the interference
frings are strong,and for the very low frequencies,where the index of refraction
becomes large.The absorption is seen to be quite strong,more than 2000 times
greater than that of the host crystal.Below 0.15 THz the data become noisy
due to the limited beam power,but the theoretically predicted drop in
absorption at low frequencies is clearly observable.In Fig.3(b),we present the
obtained real part of the index of refraction versus frequency.This quantity is
strongly frequency dependent,showing a clear minimum followed by a
dram
为了便于解释，我们删除的数据的影响的思考
数值，使用电解铁的介电函数的德鲁德fit.The
更正，其中的结果显示在图3 （ a ） ，特别重要的是
非常高的频率，在吸收低，干扰
弗林斯是强有力的，和非常低的频率，而折射率
成为large.The吸收被认为是相当强劲，超过2000次
大于主机crystal.Below 0.15赫兹的数据变得喧闹
由于有限束功率，但在理论上预测下降
吸收低频显然是observable.In图3 （ b ） ，我们目前的
获得真正的一部分，折射率与frequency.This数量
强烈频率依赖，显示一个明确的最低之后，
大幅度增加对刘远贵frequencies.The这太赫兹之间的协议
光学数据和简单的德鲁德理论是非同寻常的。
由于太赫兹光学特性的样本主要是确定的
承运人的动态，我们已经间接衡量的电导率
掺杂silicon.To链接的光学测量与电子，真正的组成部分
电导率计算出光学数据显示在图3
（ d ）项。真正的部分是强烈的频率依赖性，从单调下降
其直流峰值降低价值最高测量频率为2 THz.The
推断直流电导率是0.89 Ω厘米（ P型）和1.15Ω厘米（ ñ
型） 。的行为虚部是完全不同的，增加
从零低频，高峰在中端，然后显示一个渐进
decline.The同意德鲁德理论的实部和虚
部分电导率是完全可以接受。
我们认识到，优秀的口罩和晶圆制造的海陈和
讨论与索伦Keiding.This研究部分支持
美海军研究办公室。