UC知道高手翻译，非常棘手
来源：百度知道 编辑：UC知道 时间：2024/06/06 14:34:19
III. CIRCUIT DESCRIPTION
Fig. 1 illustrates the developed test-bed circuit for the acquisition of SiC power diode reverse recovery
characteristics. It is important to note that the circuit is very well characterized, meaning that the electrical
values of all circuit components and parasitic elements within the circuit are precisely known. The circuit
of Fig. 1 would normally use a power MOSFET as the control switch, but the importance of the work
described here is in the replacement of that control switch with a high frequency SiC transistor; in
previous work [2-4], a 6LF6 vacuum tube was substituted for the MOSFET switch to achieve low
parasitic capacitance at the Device Under Test (DUT) anode as well as an extremely fast switching speed.
S S
G
D
n +
n +
n -
metal
metal
p - body
n+
p-body
oxide
Fig. 4. Cross-section of a VDMOSFET.
5
The implementation of such a vacuum tube con
Fig. 1 illustrates the developed test-bed circuit for the acquisition of SiC power diode reverse recovery
characteristics. It is important to note that the circuit is very well characterized, meaning that the electrical
values of all circuit components and parasitic elements within the circuit are precisely known. The circuit
of Fig. 1 would normally use a power MOSFET as the control switch, but the importance of the work
described here is in the replacement of that control switch with a high frequency SiC transistor; in
previous work [2-4], a 6LF6 vacuum tube was substituted for the MOSFET switch to achieve low
parasitic capacitance at the Device Under Test (DUT) anode as well as an extremely fast switching speed.
S S
G
D
n +
n +
n -
metal
metal
p - body
n+
p-body
oxide
Fig. 4. Cross-section of a VDMOSFET.
5
The implementation of such a vacuum tube con
第三次世界大战。电路的描述,
图1所示的研制的实验电路的电源二极管反向恢复。上海国际赛车场有限公司
特征。值得注意的是,该电路非常清楚,也就是说,电
所有电路元件值和寄生虫元件电路中的确知。这个电路
图1中通常会使用一种功率MOSFET作控制开关,而重要的工作
这里描述的是在更换,控制开关和高频电晶体;在上海国际赛车场有限公司
以前的作品[2胜4败),一个6LF6真空管替换了大功率MOSFET开关来实现低
寄生电容在被测装置(大连)阳极以及极开关速度快。
S S
G
D
n +
n +
n -
金属,
金属,
p -体
n +
p-body
氧化
图4。横截面的VDMOSFET性能。
5
实施这样的真空管控制开关要求设计的广泛知识
管子的屏幕负面驱动电路,以及需要实施-Vdrive之间的电路
和0 v。另一方面,只需要三接端函数发生器的能力
提供一个gate-drive 0 - V与可变脉冲V形上升/下降的时间。
开关控制信号用于试验台是一个five-pulse破裂引发的脉搏,因此10赫兹
能够使用在参加考试的范围之外的一般权力运作。这个five-pulse破裂
也减少了大连和开关自相结合,创造出表征装置的现象
温度;进一步的目的,突然不需要电源供应器提供了一个大的
输出电流、价值和输出的滤波电容,用于减轻交流波纹可以储存了
足够的输出电流的真实的层面。
在线翻译翻得，可能有点问题，见谅~