UC知道晶体管外文翻译
来源：百度知道 编辑：UC知道 时间：2024/06/20 05:22:43
Mos Transistors
Presently , the most popular technology for realizing microcircuits makes use of MOS transistors . The acronym MOS stands for metal-oxide semiconductor , which historically denoted the gate , insulator ,and channel region materials respectively . The MOS transistors can be divided into two classes in terms of carrier: N-channel and P-channel , electrons are used to conduct current in N transistors , whereas holes are used in P transistors while N devices conduct with a positive gate voltage , P devices conduct with a negative gate voltage .
According to the voltage condition , there are two kinds of MOS transistor: enhancement and exhausted . MOS transistors are actually four-terminal devices ; the fourth terminal is a substrate connection . For digital circuits , the substrate connection of N-channel transistors is almost always the most negative IC voltage (i.e. ground or Uss) . Similarly , the substrate connection for P-channel transistors will be assu
Presently , the most popular technology for realizing microcircuits makes use of MOS transistors . The acronym MOS stands for metal-oxide semiconductor , which historically denoted the gate , insulator ,and channel region materials respectively . The MOS transistors can be divided into two classes in terms of carrier: N-channel and P-channel , electrons are used to conduct current in N transistors , whereas holes are used in P transistors while N devices conduct with a positive gate voltage , P devices conduct with a negative gate voltage .
According to the voltage condition , there are two kinds of MOS transistor: enhancement and exhausted . MOS transistors are actually four-terminal devices ; the fourth terminal is a substrate connection . For digital circuits , the substrate connection of N-channel transistors is almost always the most negative IC voltage (i.e. ground or Uss) . Similarly , the substrate connection for P-channel transistors will be assu
Mos晶体管目前，最普遍的技术为体会微型电路利用MOS晶体管。 首字母缩略词MOS代表金属氧化物半导体，历史上表示各自门、绝缘体和渠道区域材料。MOS晶体管可以被划分成二类根据载体： N渠道和P渠道，电子在N晶体管使用举办潮流，而孔用于P晶体管，当N设备品行以正面门电压， P设备品行以消极门电压时。
根据电压情况，有二MOS晶体管： 改进和用尽。 MOS晶体管实际上是四终端设备; 第四个终端是基体连接。 为数字电路， N渠道晶体管的基体连接几乎总是最消极的集成电路电压(即。 地面或Uss)。同样，基体连接为P渠道晶体管将假设是最正面的集成电路电压，被标记UDD。 这总将是assumedto是实际情形，除非否则陈述，并且基体连接不会显示。
不同于多数双极连接点晶体管(BIJ)技术，只做统治用途晶体管的一个类型，包含N和P晶体管的晶体管微型电路的正常MOS电路用途二补全类型称CMOS电路，为补全MOS。