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来源：百度知道 编辑：UC知道 时间：2024/05/03 03:59:12
Introduction
Recently we have reported several related routes for GaN synthesis utilizing inorganic azide precursors that incorporate hydride and halide ligands instead of organic groups. Our method for growth of epitaxial nitride films has been primarily focused on the thermodynamically driven decomposition of the newly synthesized Cl2GaN3, H2GaN3, HBrGaN3, and HClGaN3 azidogallanes on SiC and sapphire substrates.1-3 Our search for analogous inorganic azides of indium that might be useful as precursors to InN has led to the development of the new and completely inorganic X2InN3 polymeric compounds (X ) Cl, Br) and their molecular adducts with common Lewis bases such as tetrahydrofuran (THF) and pyridine. Related organometallic
azides of indium, such as N3In[(CH2)3NMe2]2 and the tris¬
(pyridine) complex of In(N3)3, have been recently synthesized and were successfully used to prepare InN thin films and bulk powders.4,5 In this note we describe the synthesis and proper
Recently we have reported several related routes for GaN synthesis utilizing inorganic azide precursors that incorporate hydride and halide ligands instead of organic groups. Our method for growth of epitaxial nitride films has been primarily focused on the thermodynamically driven decomposition of the newly synthesized Cl2GaN3, H2GaN3, HBrGaN3, and HClGaN3 azidogallanes on SiC and sapphire substrates.1-3 Our search for analogous inorganic azides of indium that might be useful as precursors to InN has led to the development of the new and completely inorganic X2InN3 polymeric compounds (X ) Cl, Br) and their molecular adducts with common Lewis bases such as tetrahydrofuran (THF) and pyridine. Related organometallic
azides of indium, such as N3In[(CH2)3NMe2]2 and the tris¬
(pyridine) complex of In(N3)3, have been recently synthesized and were successfully used to prepare InN thin films and bulk powders.4,5 In this note we describe the synthesis and proper
最近我们有几个相关报导言路甘叠合成体,将利用无机氢化物、卤化物 而配有机群体. 我国经济增长方式的外延片已经氮化热力学驱动主要集中在新近分解 合成cl2gan3,h2gan3,hbrgan3, 对碳化硅、蓝宝石、hclgan3azidogallanessubstrates.1-3寻找类似无机叠氮化铟可能有用 前驱客栈导致新的发展,彻底x2inn3高分子无机化合物(十) 氯、溴)合物分子及其基地等共同刘易斯四氢呋喃、吡啶(四氢呋喃). 相关有机叠氮化铟等n3in[(摩尔)3nme2]2、招聘108/(吡啶)情结(N3型)3、 近日已被成功地用于合成薄膜及散装客栈准备在这说明我们powders.45 描述合成与性能和br2inn3cl2inn3敬献的固态分子结构新型双核cl2inn3(四氢呋喃)2 复杂囊括了in2n2核心形成环状衔接叠配. 结果与讨论x2inn3(十)氯、溴)反应sime3n3愿意与氯inx3(十)、 溴)空中敏感,而爆、无色固体溶于有机溶剂. 三元素分析、字型,建议x2inn3氮化合物的分子式为. 红外光谱cl2inn3很简单显示高分子结构相似,cl2gan3. 频谱是否符合群体和缺乏有机显示强大的不对称伸叠(îas) 配在2132cm-1的吸收带最强的. 其他显着特点包括îsym(N3型)在1248厘米-1,î(氮)在390厘米-1.*(N3型)在690厘米-1 而ç(N3型)在575厘米至1. 红外光谱cl2inn3br2inn3类似,包括在2121震荡公分-1(îasym(N3型)) 1257厘米-1(îsym(N3型)),678厘米-1(.*(N3型))、581厘米-1(ç(N3型)).