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(B) For the depletion-mode structure shown in Fig. 1(c),
the total capacitance of the system will depend on the operation
frequency and bias voltage. At low frequencies and
Vg,Vt, the total capacitance will be smaller than Cgox due to
the depletion region capacitance. At low frequencies and
Vg.Vt (strong inversion), the formation of the inversion
layer makes the total capacitance equal to the gate oxide
capacitance, as in the accumulation case. At higher frequencies,
CT will coincide with that at low frequencies for
Vg,Vt; however, for Vg.Vt, the electron (inversion layer)
concentration will not be able to follow the ac signal and the
depletion region capacitance will lead to smaller CT, producing
a smaller time constant than in the accumulation regime.
For example, we calculated CT=9.47310−17 F/mm for Vg
=20 V and ac frequency of 1 MHz. This suggests that even
higher speed operation can be achieved with t
the total capacitance of the system will depend on the operation
frequency and bias voltage. At low frequencies and
Vg,Vt, the total capacitance will be smaller than Cgox due to
the depletion region capacitance. At low frequencies and
Vg.Vt (strong inversion), the formation of the inversion
layer makes the total capacitance equal to the gate oxide
capacitance, as in the accumulation case. At higher frequencies,
CT will coincide with that at low frequencies for
Vg,Vt; however, for Vg.Vt, the electron (inversion layer)
concentration will not be able to follow the ac signal and the
depletion region capacitance will lead to smaller CT, producing
a smaller time constant than in the accumulation regime.
For example, we calculated CT=9.47310−17 F/mm for Vg
=20 V and ac frequency of 1 MHz. This suggests that even
higher speed operation can be achieved with t
(二)为耗尽型结构显示图. 1(c),总容量的系统将取决于操作频率和偏压. 在低频率和vg,vt,总容量将小于cgox由于耗尽区域电容. 在低频率和vg.vt(强烈反转) 形成了逆温层,使总容量相当于栅氧化电容 为积累案例. 在更高的频率,ct将会配合在低频率vg,vt; 不过,对于vg.vt, 电子(逆温层)的浓度将无法跟随AC信号和耗尽区将电容 导致较小的断层,制作一个较小的时间常数比2003年的积累制度. 举例来说,我们计算ct=9.47310-17f/毫米vg=20V及交流频率为1兆赫. 这意味着更高的运行速度能达到消耗模式不是与累积模式. 注意到,在本案中,由于耗尽区宽度保持恒定vg.vt(恒容) 光损失的结构将大约常数vg.vt, 而平等的最低值,在直流分析