UC知道帮忙翻译成英文吧,
来源：百度知道 编辑：UC知道 时间：2024/05/27 05:05:59
①增大α2。
②减小α1+α2，使α1+α2接近1。
增大α2即可使体管控制灵敏，从而使得GTO易于关断。减小α1+α2，可使得GTO在导通时接近临界饱和，有利于GTO的关断。普通晶闸管的α1+α2≥1.15，导通时饱和较深，无法用门极负电流脉冲使其关断。而GTO在设计时使α1+α2≈1.05，给门极控制关断提供了有利条件。可以看出，GTO的两个等效晶体管电流放大系数之比α2/α1比普通晶闸管的大。当然，由于GTO导通时接近临界饱和，使得管压降比普通晶闸管大，增加了导通时的损耗。
下面分析GTO的开通过程和关断过程：
设GTO阳极电压力正向电压，当在门极加正向触发电流IG后，通过N1P2N2晶体管的放大作用使得其集电极电流IC2和发射极电流IK增加。IC2是N1P2N2晶体管的基极电流，它又使得其集电极电流IC1和发射极电流IA增加。IC1注入N1P2N2晶体管的基极，使IC2是IK进一步增加。这是一个正反馈过程。当IA和IK增加使α1+α2＞1后，即使撤去门极电流IG，GTO也能维持导通。图7-14的L点为1+α2=1的临界点，当GTO电流再增加时，饱和加深。图中阴影的宽度表示了饱和的深度。
设GTO处于导通状态且阳极电流为IA。这时如果给门极加负断脉冲，则P1N1P2晶体管基极电流Ic1将从门极抽出形成-IG，使N1P2N2晶体基极电流Ib2减小，从而使IK和IC2减小。IC2的减小又使IA减小，也使Ic1减小，这也是一个正反馈过程。当IA和IK的减小使α1+α2＜1时，等效晶体管P1N1P2和N1P2N2已退出饱和，GTO内部不再满足维持导通的条件，阳极电流就很快下降到零而关断。
请不要用在线翻译,谢谢(是关于变流技术的)
Beta said the GTO gate control on the degree of sensitivity. Control shutdown, type (7-9) IG <0, then β said shutdown gain. In order to increase sensitivity and shutdown control increases shutdown gain from the equation (7-9), we can see the can
① increased α2.
② reduce α1 + α2, α1 + α2 close to 1.
Increased α2 be sensitive to body systems of control, thus enabling easy GTO shutdown. Reduce α1 + α2, GTO can be made when the on-saturated close to the threshold, to the shutdown GTO. GTO in the design and the α1 + α2 ≈ 1.05, to the gate control shutdown providing favorable conditions. We can see that the equivalent of two transistors GTO current amplification coefficient ratio α2/α1 than regular thyristor large. Of course, due to on - GTO close to the threshold when saturated, making the pressure drop than the regular thyristor, increased on-time losses.
Issues added: GTO below the opening of the process and shutdown process:
Located GTO anode forward v