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Since MOS component entrance accepts meter of dimension, channel area space electric charge resembles the long channel component no longer becoming more and more notable with channel the length like that mainly all from grid electrode voltage impact of the electric potential controlling , leaving out two area of source's over channel area. Characteristic property describing MOS component electricity as a science for rightness, the accurate threshold value voltage Vth model is very important. Effect the main body of a book is brought about owing to that the BSIM standard has analysed the fault channel effect (SCE) with has leaving out induced barrier potential coming down (DIBL) to threshold value voltage, discover upright ding-dang bars electricity constant K = 25, channel the length L <100 nm time, with channel the length diminution , the prompt threshold value voltage diminution.