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来源：百度知道 编辑：UC知道 时间：2024/05/24 06:07:51
Current and Future Trends in CMP PROCESS CONTROL
The most accepted and adopted form of process control to date is wafer--to--wafer process control (WTWPC)3—5．The goal of this process control strategy is to tighten the variations between the polish wafers by minimizing the spread of the average post polished film thickness of the wafer．To do this，the polish process must be adjusted to compensate for wafer，polisher and consumable related variations．A diagram of the control loop and the data flow supporting it is given in figure 6．The process control requires measurements of the wafers before and after the polish process to obtain the global and localized polish rate (in case where WIWPC is used)．This may be impractical due to the polisher throughput reduction by the cumulative metrology measurement times. Including an in—situ endpoint detector in the process loop relaxes
the number of wafers needed to be measured by the IM to provide a tighter post polish thickness distribution
The most accepted and adopted form of process control to date is wafer--to--wafer process control (WTWPC)3—5．The goal of this process control strategy is to tighten the variations between the polish wafers by minimizing the spread of the average post polished film thickness of the wafer．To do this，the polish process must be adjusted to compensate for wafer，polisher and consumable related variations．A diagram of the control loop and the data flow supporting it is given in figure 6．The process control requires measurements of the wafers before and after the polish process to obtain the global and localized polish rate (in case where WIWPC is used)．This may be impractical due to the polisher throughput reduction by the cumulative metrology measurement times. Including an in—situ endpoint detector in the process loop relaxes
the number of wafers needed to be measured by the IM to provide a tighter post polish thickness distribution
在CMP过程控制当前和未来趋势
最接受并通过了过程控制迄今形式晶圆-到-晶圆过程控制（WTWPC）3 - 5，这个过程的控制策略的目标是加强通过最小化的蔓延波兰之间的晶圆的变化平均后的wafer.To抛光膜厚度做到这一点，波兰进程必须进行调整，以补偿晶片，抛光机和消费有关的控制回路variations.A图和数据流的支持，是由于6，图的过程控制要求前后波兰晶圆测量过程中获得全球和本地化波兰率（其中WIWPC使用情况）。这可能是不切实际的，由于所累积计量测试时间抛光吞吐量减少。包括现场端点探测器在这一过程中循环松弛
所需的晶圆数量来衡量即时提供更严格的打磨后厚度分布，同时保持高吞吐量的抛光。
过程控制参数需要进行优化的基础上，每手晶圆数目来衡量，每个晶圆的数据点的数量，以及之间的数据采集和波兰的过程中，WTWPC共同实践延迟时间使综合计量数据的使用通过测量收集的传入和波兰wafers.Alternatively后，必要的厚度数据可透过实验室的全过程控制回路，向前和向后喂养控制环路。