翻译 小弟 急啊

来源：百度知道 编辑：UC知道 时间：2024/06/24 12:50:34
We can also use elements from the third group of the periodic table as dopants. The elements boron, aluminum, gallium, and indium are used in semiconductor technology. The missing bonding electron of a trivalent dopant atom leads to the creation of a hole and thus an increase in the positive conductivity of the semiconductor. This is therefore called a p-type conductor, and these types of dopant are known as acceptors. The holes are now dominant, i.e., the majority charge carriers, and the electrons are the minority charge carriers. The same regularity applies as in the case of doping with pentavalent atoms, i.e., even at low temperatures all holes are active. The energy levels of a number of chemical elements in the energy gap can be seen in Fig. 2.3. Donor levels are near the conduction band and acceptor levels are near the valence band. As can also be seen, some elements cause levels near the center of the gap. These levels are called recombination centers because
they cause ex

我们可以也使用从周期表的第三个小组的元素作为掺杂物。 元素硼、铝、镓和铟用于半导体技术。 一个三价掺杂物原子的缺掉接合电子导致孔的创作和因而在半导体的正面传导性的增量。 因此这称p类型指挥，并且掺杂物的这些类型叫作接受器。 孔现在是统治的，即，多数人载流子和电子是少数载流子。 同一规律性申请在服用五价原子情况下，即，甚而在低温所有孔活跃的。 一定数量的化学元素的能级在能域的在图2.3能看。 施主能级在传导带附近，并且受主能级在化学价带附近。 能也被看见，有些元素在空白附近的中心导致水平。 这些水平称复合中心，因为
they起因再结合的剩余自由电子和孔横跨空白。 这再结合应该避免与太阳能电池(和多数其他半导体装置的)操作的。 因为甚而痕量有些杂质是非常有害的，半导体必须是极端纯净的。