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来源：百度知道 编辑：UC知道 时间：2024/05/30 02:07:58
As far as semiconductor materials are concerned, the value of πσ is far more than that of the (1+2μ), so the latter can be ignored. Correspondingly the change of material resistance can be denoted as follows:
(5)
In above equations, A is transverse area of materials, L is length of materials, ∏ piezoresistant modulus, σ stress, ρ is modulus of semiconductor materials.
According to the Equation (5), change rate of semiconductor materials (ΔR/R) is mainly caused by piezoresistant effect (Δρ/ρ).Four P type resistances are spread onto N type silicon membrane to form Wheatstone bridge which constitutes silicon Piezoresistance chip, and then the change of pressure can be transformed into the change of resistance.
Operational principle of platinum membrane resistance temperature sensor
Platinum membrane resistance temperature sensor is based on the peculiarity of membrane resistance that attached to alumina porcelain whose resistance can be changed with outside tem
(5)
In above equations, A is transverse area of materials, L is length of materials, ∏ piezoresistant modulus, σ stress, ρ is modulus of semiconductor materials.
According to the Equation (5), change rate of semiconductor materials (ΔR/R) is mainly caused by piezoresistant effect (Δρ/ρ).Four P type resistances are spread onto N type silicon membrane to form Wheatstone bridge which constitutes silicon Piezoresistance chip, and then the change of pressure can be transformed into the change of resistance.
Operational principle of platinum membrane resistance temperature sensor
Platinum membrane resistance temperature sensor is based on the peculiarity of membrane resistance that attached to alumina porcelain whose resistance can be changed with outside tem
只要半导体材料, 价值?? 比那是更多(1+2?), 如此后者可能被忽略。物质抵抗的变动可能相应地表示如下: (5) 在上述等式, A 材料横向区域是是, L 长度材料, 吗? piezoresistant 模数? 重音? 是半导体材料的模数。 根据等式(5), 半导体材料的变动率(?R/R) 由piezoresistant 作用(??/?).Four P 类型抵抗主要造成被传播N 类型硅膜形成构成硅Piezoresistance 芯片的Wheatstone 桥梁, 并且压力的变动可能然后被变换成抵抗的变动。 白金膜抵抗温度传感器的操作的原则 白金膜抵抗温度传感器根据附有铝土瓷抵抗可能被改变以室外温度膜抵抗的特异。传感器可能被使用测量平均温度媒介在光谱(陈・等2001) 交互作用在白金膜抵抗和温度之间可能由以下等式表示: (6) 那里, R0 是白金膜抵抗的价值在温度0.C (?),Rt 是白金膜抵抗的价值在温度t .C (?), t 是温度媒介在测试之下(?), 并且A, B, C...... 是可能由实验确定的相关的常数。 A=3.96847□0-3/.C; B=-5.847□0-7/ .C 2; C=-4.22□0-12/ .C 3 在范围-50-600.C, 交互作用在抵抗之间和温度可能由Eqs 显示。7 和8 。 (7) (8) 谈到Pt100 白金膜抵抗: (9) 复合多功能传感器设计 压力和热传感器设计
靠。。