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7.2.3.2 Nanolayer MoSi2/SiC
Multilayers MoSi2/SiC have been prepared by sputtering on Si substrates, where MoSi2
was sputtered from a planar magnetron whereas SiC was sputtered from rf diode. The
MoSi2/SiC layered composites were prepared by cyclically passing the samples beneath
the two targets at such a rate and target power that the constituent SiC and MoSi2 layers
had nominal thicknesses of 3 nm and 10 nm respectively (Kung, et al., 1995). Figure 7.5
shows (a) the bright field image of the cross-sectional transmission electron microscopy
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(TEM) of an as-deposited MoSi2/SiC multilayered film, and (b) corresponding selected
area diffraction pattern which shows the amorphous structure of the film. However, heat
treatment induces recrystallization in this MoSi2/SiC multilayered film. Figure 7.6
shows the low magnification bright field image of an 800 °C and 1 h annealed
multilayer film.
Multilayers MoSi2/SiC have been prepared by sputtering on Si substrates, where MoSi2
was sputtered from a planar magnetron whereas SiC was sputtered from rf diode. The
MoSi2/SiC layered composites were prepared by cyclically passing the samples beneath
the two targets at such a rate and target power that the constituent SiC and MoSi2 layers
had nominal thicknesses of 3 nm and 10 nm respectively (Kung, et al., 1995). Figure 7.5
shows (a) the bright field image of the cross-sectional transmission electron microscopy
186
(TEM) of an as-deposited MoSi2/SiC multilayered film, and (b) corresponding selected
area diffraction pattern which shows the amorphous structure of the film. However, heat
treatment induces recrystallization in this MoSi2/SiC multilayered film. Figure 7.6
shows the low magnification bright field image of an 800 °C and 1 h annealed
multilayer film.
7.2.3.2 nanolayer mosi2/sic
多层mosi2/sic已准备由溅射硅衬底上，那里的MoSi2
溅射是从一个平面，而磁控溅射碳化硅是从射频二极管。那个
mosi2/sic层状复合材料制备了周期性的合格样本下方
这两个目标，在这样的速度和目标的权力，制宪SiC和MoSi2的层
曾名义厚度的3 nm和10 nm的分别为（西贡，等人， 1995年） 。图7.5
显示（一）明场的形象，横截面透射电子显微镜
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（透射电镜）一作为沉积mosi2/sic多层次的电影，和（ b ）项相应的选定
面积衍射图样，表明了非晶态结构的电影。然而，热
治疗诱导结晶在这mosi2/sic多层次的电影。图7.6
表明低倍率的光明领域的形象， 1 800 ℃和1 h退火
多层膜。