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7.3 Pulsed Laser Deposition
Over the past 15 years, the pulsed laser deposition (PLD) has emerged as one of the
simplest and most versatile methods for the deposition of thin films of a wide variety of
materials. The stochiometric removal of constituent species from the target during
ablation process is one of the main advantages in PLD compared to other deposition
techniques. Various thin film materials have been deposited by PLD including metals,
semiconductors, nitrides, dielectrics, oxides, organic compounds/polymers, and ternary
compounds (Chrisey and Hybler, 1994). Conceptually and experimentally, PLD is an
extremely simple deposition technique, probably the simplest among all thin film growth
techniques.
Over the past 15 years, the pulsed laser deposition (PLD) has emerged as one of the
simplest and most versatile methods for the deposition of thin films of a wide variety of
materials. The stochiometric removal of constituent species from the target during
ablation process is one of the main advantages in PLD compared to other deposition
techniques. Various thin film materials have been deposited by PLD including metals,
semiconductors, nitrides, dielectrics, oxides, organic compounds/polymers, and ternary
compounds (Chrisey and Hybler, 1994). Conceptually and experimentally, PLD is an
extremely simple deposition technique, probably the simplest among all thin film growth
techniques.
7.3脉冲激光沉积
在过去15年中，脉冲激光沉积（可编程逻辑器件）已成为其中的
最简单和最灵活的方法沉积薄膜的各种各样的
材料。该stochiometric清除组成物种由目标在
烧蚀过程是其中一个主要的优势在可编程逻辑器件相比于其他沉积
技术。各种薄膜材料已交存的可编程逻辑器件，包括金属，
半导体，氮化物，电介质，氧化物，有机化合物/聚合物，三元
化合物（ chrisey和hybler ， 1994年） 。在概念上和实验，可编程逻辑器件是一个
非常简单的沉积技术，可能是最简单的各薄膜生长
技术。