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The initial stages of epitaxial growth of c-axis oriented YBCO thin films on well lattice
matched substrates have been studied using reflected high energy electron diffraction
(RHEED) in situ monitoring during growth (Terashima, et al., 1990, Karl, et al., 1992)
and using scanning tunneling microscopy (STM) (Hawley, et al., 1991), atomic force
microscopy (AFM) (Kwo, et al., 1992; Lowndes, et al., 1992), and cross-sectional
electron microscopy (Pennycook, et al., 1991; Jia, et al., 1990) ex situ examination after
growth. YBCO on a well lattice matched substrate grows by a Stranski-Krastanov
mechanism; layer-by-layer growth with a layer of unit-cell thickness turns into island
growth after between 8 and 16 unit-cells thickness (Zheng, et al., 1992). The schematic
diagram of a Stranski-Krastanov growth can be found in Fig. 7.9. The switch from 2-D
to 3-D growth is characteristic of the Stranski-Krastanov growth mode and the thickness
matched substrates have been studied using reflected high energy electron diffraction
(RHEED) in situ monitoring during growth (Terashima, et al., 1990, Karl, et al., 1992)
and using scanning tunneling microscopy (STM) (Hawley, et al., 1991), atomic force
microscopy (AFM) (Kwo, et al., 1992; Lowndes, et al., 1992), and cross-sectional
electron microscopy (Pennycook, et al., 1991; Jia, et al., 1990) ex situ examination after
growth. YBCO on a well lattice matched substrate grows by a Stranski-Krastanov
mechanism; layer-by-layer growth with a layer of unit-cell thickness turns into island
growth after between 8 and 16 unit-cells thickness (Zheng, et al., 1992). The schematic
diagram of a Stranski-Krastanov growth can be found in Fig. 7.9. The switch from 2-D
to 3-D growth is characteristic of the Stranski-Krastanov growth mode and the thickness
最初阶段的外延生长c轴取向YBCO薄膜上，以及格子
匹配的衬底上已研究了用反映高能电子衍射
（中RHEED ）在现场监测期间增长（寺，等人， 1990年，卡尔等人， 1992年）
并利用扫描隧道显微镜（ STM ）的（ hawley ，等人， 1991年） ，原子力
显微镜（ AFM ） （果岭，等， 1992年; lowndes ，等， 1992年） ，和横截面
电子显微镜（彭尼库克等人， 1991年;贾庆林等人， 1990年）易地考试后
增长。高温超导YBCO对良好的晶格匹配的衬底增长1 stranski - krastanov
机制;逐层增长与层单位细胞的厚度变成岛
增长后， 8日至16日单位-细胞厚度（郑等人， 1992年） 。
示意图
图1 stranski - krastanov增长，可以发现在图。 7.9 。开关从二维
到三维生长的特点是该stranski - krastanov增长方式和厚度
在这过渡期发生的定义是作为一个临界厚度。经过这样一个开关，
暴露了交流和BC面临边缘的梯田层层的3 D YBCO结构的离岛
成为快速增长的网站。然后螺旋生长特性出现在厚薄膜。
这个岛国的增长和形成螺杆混乱源自释放该
应变从最初的紧张YBCO结构的薄膜。作为电影得到较厚，其自然格子
间距必须得到恢复，以尽量减少免费能源。因此应变救济
通过引入位错附近的界面。