UC知道急！微电子技术专业英语翻译！
来源：百度知道 编辑：UC知道 时间：2024/06/09 18:05:42
since most of the recombination current occurs near where R = Rmax,the barrier for electrons and holes for recombination current is (Vbi-Va)/2. This is half the barrier for diffusion current of （Vbi - Va).
Let us consider recombination and generation under reverse bias.The energy band diagram is shown in Fig.3.18.We have discussed that under reverse bias the transition region widens with the significant opportunities for both generation and recombination.Under reverse bias n and p are both small in most of the transition region,the recombination can be ignored,since there are few electrons to recombine and few holes with which to recombine.
此翻译请楼主审阅是否专业。
since most of the recombination current occurs near where R = Rmax,the barrier for electrons and holes for recombination current is (Vbi-Va)/2. This is half the barrier for diffusion current of （Vbi - Va).
由于复合电流大多发生在靠近R＝Rmax的地方，所以电子和空穴对复合电流的屏障就是(Vbi-Va)/2. 这是扩散电流(Vbi-Va)的一半。.
Let us consider recombination and generation under reverse bias.The energy band diagram is shown in Fig.3.18.让我们来考虑一下在反偏压下的复合和发生。能带图示于图3.18.We have discussed that under reverse bias the transition region widens with the significant opportunities for both generation and recombination.我们已经讨论了，在反偏压下，过渡区随着发生和复合的明显机会而展宽。Under reverse bias n and p are both small in most of the transition region,the recombination can be ignored,since there are few electrons to recombine and few holes with which to recombine. 在反偏压下，n和p在大多数过渡区都很小，复合就可以忽略，因为几乎不存在电子来复合，也几乎没有空穴与它们来复合。
由于多数复合电流发生在 R = Rmax 处，因此复合电流的电子和空穴的势垒为 (Vbi-Va)/2。这是扩散电流的势垒 (Vbi - Va) 的一半。
我们来看看反向偏置下（电流）的复合和产生。能带图如图3.18所示