UC知道化学专业翻译系列3（奖励10分）
来源：百度知道 编辑：UC知道 时间：2024/04/27 12:14:39
material observed in dark-field TEM and the in-plane
orientation distribution, measured using RHEED analysis,10
are plotted as a function of film thickness in Fig. 4. There isa clear correlation between lateral crystal growth and biaxial
texture.
The observations reported here are consistent with a
three-stage microstructural evolution during IBAD: ~i! an
initially amorphous MgO film is deposited which remains
amorphous in the thickness range between 0–3.5 nm, ~ii!
MgO crystals nucleate via solid phase crystallization11 withrestricted out-of-plane texture and nearly random in-plane
texture at a thickness of approximately 3.5 nm, and ~iii! inplane
texture evolves rapidly in the thickness range between
3.5 and 4.5 nm due to amorphization of grains with misaligned
in-plane texture and preferential lateral solid phase
growth of grains with aligned in-plane texture. Recent
面积分数diffracting氧化镁晶体材料观察暗场透射电镜及平面定向分配 测rheed分析767.10正密谋为2293mm膜厚度无花果. 4. 艾萨有明确的对应关系横向晶体生长和双轴织构. 观察报今天均符合三个阶段的过程中的组织演变ibad:~我! 最初的非晶镁薄膜的沉积仍非晶材料厚度介于0-3.5nm,~二! 氧化镁晶体核固相crystallization11withrestricted出平面纹理和近随机的平面纹理在一个厚度约为 3.5nm,~三! 自适应纹理迅速演变的厚度介于3.5至4.5nm由于amorphization米食与misaligned 在平面纹理和优惠侧固相成长粒数与不结盟的平面纹理. 最近分子动态模拟ar1离子碰撞与小氧化镁晶体产量真知灼见nucleation介ibadbiaxialtexture发展. 分子动力学模拟用zepeda-鲁伊斯和srolovitz换算为单一ar1离子影响,沿线011@#方向窜 ~一个最小损害方向! 一个1.331.331.3nm氧化镁晶体是amorphized,b ut一2.132.132.1nmMgO晶体sustains小永久damage.12是积极有利的氧化镁形成小晶体,h owever,离子轰击amorphizes与横向分布的物质从第一晶体,e venthosealignedalongionchannelingdirections. 一旦电影达到一个临界厚度,有足够的材料,为稳定型氧化镁晶体的形成奠定了基础. 我们建议,表面自由能最小,加上能量离子碰撞,带动了ofplane面向一~001! 光纤texture.13并无积极有利的平面方向nucleationonanamorphoussubstrate等氧化镁晶体 nucleateintheamorphous氧化镁基质有随机的平面定向分配. 晶体所@011#轴带沿线接轨的方向来袭ar1离子受到的破坏比 misaligned晶体,可在当地amorphizedbyionbombardment7并有效防范日益严重. 由于固相结晶收益约粮所为导向,以001~! 纤维织和一个在平面方向面临@011#带轴走向来袭离子创造一个biaxiallytextured镁薄膜. 敏感rheed实验及以后电子显微镜分析显示,突然, 出人意料地从非晶态薄膜为双轴织片. 这些结果清楚地